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Patrick Münster

Einfluss des Self Turn-ON auf das Schalt- und Kurzschlussverhalten von IGBT

Universität Rostock, 2019

Abstract: The major topics of this thesis are investigations regarding the Self Turn-on. The dynamic feedback between the power- and the control-path of an IGBT (Insulated Gate Bipolar Transistor) depends on the collector-current and influences the switching and short-circuit behaviour. This is caused by an intrinsic controlled displacement current between the IGBT’s drift-region and its gate-junction. The physics behind this effect are based on a local change of the charge-carrier density in the drift-region below the gate-electrode.

doctoral thesis   free access