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David Hammes

Die Kurzschlüsse von IGBT und Diode im Active-Neutral-Point-Clamped-Dreipunktumrichter

Universität Rostock, 2021

Abstract: The work deals with semiconductor short circuits occurring in the three-level Active-Neutral-Point-Clamped converter. They have the disadvantage that after a breakdown of a semiconductor, there is the danger that further components are destroyed, and consequential damage occurs. Therefore, the work has the task of investigating all possible switching combinations in the converter to generate the three-phase output voltages, which breakdown of a semiconductor can occur, and which short circuits will finally result from it.

doctoral thesis   free access