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Hannes Krünägel

Dämpfung der Schaltoszillationen von SiC-Hochstrom-MOSFET

Universität Rostock, 2020

Abstract: In this thesis a new approach to suppress the switching ringing of SiC-MOSFETs is proposed. The damping resistor is coupled inductively. Contrary to other approaches there is no secondary winding used, but an attenuator consisting of only an iron powder core. This core is designed to have maximum loss at the frequency of the ringing and is placed on the bus connections of the module. Experimental results using 1200V-SiC-MOSFET module at currents of up to 200 A validate this approach. It is a very simple and cheap approach with a good damping behaviour and relatively low additional overvoltage.

master thesis   free access